IGBT and Super Junction MOSFET global market analysis

According to the reportlinker report, under the influence of COVID, the global market for IGBT and Super Junction MOSFET is expected to reach 7 billion U.S. dollars in 2020, and it is further estimated that it will reach a revised size of US$13.8 Billion in 2027.

The compound annual growth rate of insulated gate bipolar transistors (IGBT) is expected to reach 10.3%, reaching USD 12.4 billion. Through an early analysis of the business impact caused by COVID-19, the growth of the super-junction MOSFET field was 9.4% CAGR in the next 7 years.

The US market is estimated at $2.1 billion, while China is expected to grow at a compound annual growth rate of 9.6%

By 2020, the US IGBT and super-junction MOSFET market is estimated to be $2.1 billion. As the world's second largest economy, China is expected to reach a market size of US$2.4 billion by 2027 and maintain a compound annual growth rate. During the analysis period from 2020 to 2027, the market growth rate is 9.6%. Among other noteworthy geographic markets, Japan and Canada grew 9.5% and 8.3%, respectively, during 2020-2027. In Europe, Germany is expected to grow at a compound annual growth rate of 8.2%.

Competitors in the IGBT and super junction MOSFET market

ABB Group

Fairchild Semiconductor International

Fuji Electric Co., Ltd.

Hitachi Power Semiconductor Devices Co., Ltd.

Infineon Technologies

Mitsubishi Electric

STMicroelectronics

Toshiba Corporation

Vishay Intertechnology, Inc.

Read the full report: https://www.reportlinker.com/p05960987/?utm_source=PRN

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