Infineon Latest TRENCHSTOP™ IGBT7 and EC7 diode tailored for industrial drives applications

Article source: Infineon official website

TRENCHSTOP_IGBT7_Easy_1B

TRENCHSTOP_IGBT7_Easy_2B

Munich, Germany – 7 March 2019 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is introducing its new 1200 V TRENCHSTOP™ IGBT7 and emitter-controlled EC7 diode. The IGBTs provide for higher power density, lower system cost, and reduced system size. Packaged in the well-known Easy housing, the power module fits the needs of industrial drives applications.

Based on the new micro-pattern trench technology, the TRENCHSTOP IGBT7 chip performs with much lower static losses compared to the IGBT4. Its on-state voltage is reduced by 20 percent. This brings significant loss reduction in the application, especially for industrial drives, which usually operate at moderate switching frequencies. The power modules feature a maximum allowed overload junction temperature of 175°C. Additionally, they are marked by softer switching and an improved controllability.

The new 1200 V TRENCHSTOP IGBT7 modules are designed with the same pin out as TRENCHSTOP IGBT4 modules, which supports manufacturers in reducing their design efforts. More importantly, the new modules enable a higher output current in the same package, or the similar output current in a smaller package. As a result, designers can realize more compact inverter designs where needed. All module types are equipped with Infineon’s reliable PressFit mounting technology for low ohmic resistance and reduced process time.

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